高温雰囲気下における Pt/Ti 薄膜の動的 In-Situ FE-SEM 観察

摘要: In general, when thin films of copper (Cu), as a wiring material, and platinum (Pt) are formed on ceramic metal film, such titanium (Ti), is used the basal layer. Thus, effective strategy to lower resistance material increase size crystal grains. However, after annealing, surface roughness increases, adhesive strength deteriorates, which has undesired result that becomes easily exfoliated. There many reports in these effects attributed recrystallization Pt diffusion Ti. there few observations this phenomenon real time described. present study, we observed cross-sectional structure Pt/Ti-containing film performed dynamic high-temperature in-situ field emission electron gun type-scanning microscope (FE-SEM) analyses. A mechanism explain above proposed. The Pt/Ti was by magnetron sputtering technique onto silicon oxide (SiO2) substrate. Ti were generated continuously single chamber. resulting thicknesses 50 nm 500 for Pt, respectively. each studied with dual-beam focused ion beam (FIB)-SEM milling, while high-angle annular dark-field (HAADF) imaging carried out type-transmission (FE-TEM), microstructure evaluated backscatter diffraction (EBSD). addition, FE-SEM (Quanta-FEG) observe film. After temperature increased from room 1000°C, sample maintained at 1000°C 30 min. During period, reflection electronic (environmental scanning mode (ESEM mode)) obtain images 25 μm×25 μm area. real-time measurement using indicates occurs along grain boundaries We event precipitated Regarding action Ti, heat treatment applied an oxygen atmosphere, following events observed: under spherical nanoparticles diffused through Thereafter, cohered recrystallized grains increased, did not diffuse horizontal direction but began cover top model proposed Hanzawa et al., substrate deteriorates proved be valid study.