InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
作者： S.E. Hooper , M. Kauer , V. Bousquet , K. Johnson , J.M. Barnes
DOI: 10.1049/EL:20040015
关键词:
摘要: The first InGaN multiple quantum well laser diodes produced by molecular beam epitaxy are reported. Ridge waveguide lasers have been demonstrated at room temperature under pulsed current injection conditions. emit a wavelength of approximately 400 nm with spectral line-width less than 0.2 nm, and threshold density ∼30 kA cm−2.
sci-hub.se 参考文章(7)
D. A. Stocker, E. F. Schubert, W. Grieshaber, K. S. Boutros, J. M. Redwing, Facet roughness analysis for InGaN/GaN lasers with cleaved facets Applied Physics Letters. ,vol. 73, pp. 1925- 1927 ,(1998) , 10.1063/1.122172
N. Grandjean, J. Massies, S. Dalmasso, P. Vennéguès, L. Siozade, L. Hirsch, GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy Applied Physics Letters. ,vol. 74, pp. 3616- 3618 ,(1999) , 10.1063/1.123199
Tsuyoshi Tojyo, Takeharu Asano, Motonobu Takeya, Tomonori Hino, Satoru Kijima, Shu Goto, Shiro Uchida, Masao Ikeda, GaN-Based High Power Blue-Violet Laser Diodes Japanese Journal of Applied Physics. ,vol. 40, pp. 3206- 3210 ,(2001) , 10.1143/JJAP.40.3206
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, InGaN-Based Multi-Quantum-Well-Structure Laser Diodes Japanese Journal of Applied Physics. ,vol. 35, pp. L74- L76 ,(1996) , 10.1143/JJAP.35.L74
Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes Applied Physics Letters. ,vol. 64, pp. 1687- 1689 ,(1994) , 10.1063/1.111832
Shin-ichi Nagahama, Naruhito Iwasa, Masayuki Senoh, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Tokuya Kozaki, Masahiko Sano, Hiroaki Matsumura, Hitoshi Umemoto, Kazuyuki Chocho, Takashi Mukai, High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates Japanese Journal of Applied Physics. ,vol. 39, pp. 647- ,(2000) , 10.1143/JJAP.39.L647
S. Einfeldt, M. Dießelberg, H. Heinke, D. Hommel, D. Rudloff, J. Christen, R. F. Davis, Strain in cracked AlGaN layers Journal of Applied Physics. ,vol. 92, pp. 118- 123 ,(2002) , 10.1063/1.1481969