High-power and long-lifetime InGaN blue-violet laser diodes grown by molecular beam epitaxy
作者： W.S. Tan , M. Kauer , S.E. Hooper , J.M. Barnes , M. Rossetti
DOI: 10.1049/EL:20083456
关键词:
摘要: InGaN 405 nm multiple quantum well laser diodes grown by molecular beam epitaxy (MBE) with a continuous-wave (CW) lifetime of up to 42 h are reported. The CW threshold current density the ridge waveguide is 3.6 kA/cm2 and slope efficiency for uncoated facets 0.42 W/A per facet maximum output power 45 mW facet. Statistical variation dissipated presented MBE-grown from five different wafers.
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