Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE
作者： S. Rajan , P. Waltereit , C. Poblenz , S.J. Heikman , D.S. Green
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摘要: We report AlGaN-GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on SiC substrates with excellent microwave power and efficiency performance. The GaN buffers in these samples were doped carbon to make them insulating. To reduce gate leakage, a thin silicon nitride film was deposited the AlGaN surface chemical vapor deposition. At 4 GHz, an output density of 6.6 W/mm obtained 57% power-added (PAE) gain 10 dB at drain bias 35 V. This is highest PAE reported until now GHz HEMTs MBE. we measured 7.3 36% 7.6 40-V bias.
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