Optoelectronic GaN-based field effect transistors

摘要: We describe optoelectronic effects in GaN/AlGaN Heterostructure Field Effect Transistors (HFETs) and Insulated Gate (HIGFETs). HFETs operate as visible blind photodetectors with responsivities high several thousand A/W for wavelengths from 200 to 365 nanometers. HIGFETs exhibit light- sensitive long term current-voltage characteristic collapse after an application of a drain- to-source bias. This is removed by illumination light certain wavelengths. suggest that this consequence hot electron trapping the AlN barrier layer near drain edge gate.