Metal oxide semiconductor heterostructure field effect transistor
作者： Michael Shur , Muhammad Asif Khan , Jinwei Yang , Remigijus Gaska
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摘要: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents performance characteristics comparable to other conventional devices. The include placing one or more layers of nitride-based compounds over a substrate. Additionally, dielectric layer including silicon dioxide is placed the layers.
google.it 参考文章(17)
F. Ren, M. Hong, S. N. G. Chu, M. A. Marcus, M. J. Schurman, A. Baca, S. J. Pearton, C. R. Abernathy, Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors Applied Physics Letters. ,vol. 73, pp. 3893- 3895 ,(1998) , 10.1063/1.122927
Shunji Imanaga, Hiroji Kawai, Field effect transistor with nitride compound ,(1997)
Babar A. Khan, Nikhil R. Taskar, Piotr M. Mensz, Methods of making high voltage GaN-AlN based semiconductor devices and semiconductor devices made ,(1997)
Lori A. Lipkin, John Williams Palmour, Layered dielectric on silicon carbide semiconductor structures ,(1999)
Yukio Shakuda, Haruo Tanaka, Gallium nitride type laser for emitting blue light ,(1999)
Scott Thomas Allen, Scott Thomas Sheppard, John Williams Palmour, Nitride based transistors on semi-insulating silicon carbide substrates ,(1999)
M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, M. S. Shur, AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates Applied Physics Letters. ,vol. 77, pp. 1339- 1341 ,(2000) , 10.1063/1.1290269
Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. Asif Khan, D. Kuksenkov, H. Temkin, Schottky barrier detectors on GaN for visible–blind ultraviolet detection Applied Physics Letters. ,vol. 70, pp. 2277- 2279 ,(1997) , 10.1063/1.118837
R. Gaska, M. S. Shur, A. D. Bykhovski, A. O. Orlov, G. L. Snider, Electron mobility in modulation-doped AlGaN-GaN heterostructures Applied Physics Letters. ,vol. 74, pp. 287- 289 ,(1999) , 10.1063/1.123001
Michael S. Shur, Mohamed A. Khan, Optoelectronic GaN-based field effect transistors Optoelectronic Integrated Circuit Materials, Physics, and Devices. ,vol. 2397, pp. 294- 303 ,(1995) , 10.1117/12.206879