Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere
作者： L. Trupina , L. Nedelcu , C. Negrila , M. G. Banciu , L. Huitema
DOI: 10.1007/S10853-016-0131-1
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摘要: The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. grown using the dc magnetron sputtering technique. Ir layers directly deposited SiO2/Si substrates present a mixed (111) (200) orientations, while Ti seed exhibit strong preferred orientation favoured by good matching with titanium lattice. substrate temperature during iridium/titanium stack has significant effect surface morphology layer its stability. as-grown 20-nm-thick is smooth, having root-mean-square (rms) roughness 0.7 nm. After annealing film shows an increased due to formation agglomerations. change diffusion oxidation. Thicker better crystallised annealed oxygen atmosphere at 700 °C show only slight modification morphology. Within limits experimental error, there no electrical resistivity before after annealing. rms not varied significantly XPS investigation traces oxide surface. Ir/Ti under optimum conditions could be successfully films.
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