Adhesion layer-bottom electrode interaction during BaxSr1−xTiO3 growth as a limiting factor for device performance
作者： Markus Löffler , Andrei Vorobiev , Lunjie Zeng , Spartak Gevorgian , Eva Olsson
DOI: 10.1063/1.4730781
关键词:
摘要: Changes in bottom electrode morphology and adhesion layer composition upon deposition of BaxSr1−xTiO3 (BSTO) at elevated temperatures have been found, which a negative impact on acoustic wave resonator device performance. The difference between nominal actual are explained by grain boundary diffusion Ti or W their oxidation in-diffusing oxygen, leads to an increased interface roughness the Pt BSTO. It is shown, that room-temperature deposited TiO2 barriers fail protect against diffusion. Also layers prone this phenomenon, limits ability act as high temperature resistant for electrodes ferroelectric thin films.
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