Dual Buffer Layers for Developing Electrochemical Metallization Memory With Low Current and High Endurance
作者： Qiaoling Tian , Xiaohan Zhang , Xiaoning Zhao , Zhongqiang Wang , Ya Lin
关键词:
摘要: In this letter, the dual buffer layers of AgInSbTe (AIST) and monolayer defective graphene (DG) are introduced into amorphous carbon (aC)-based electrochemical metallization …
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