作者: Y. Q. Zhang , N. Y. Sun , R. Shan , J. W. Zhang , S. M. Zhou
DOI: 10.1063/1.4827198
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摘要: Anomalous Hall effect (AHE) of epitaxial permalloy thin films grown on MgO (001) substrates is investigated. The longitudinal conductivity independent term (i.e., the sum intrinsic and side-jump contributions) anomalous (AHC) found to be much smaller than those Fe Ni films. Band theoretical calculations AHC as a function number valence electrons (band filling) indicate that in vicinity sign change, thus resulting smallness AHC. contribution phonon scattering comparable impurity scattering. This work suggests are ideal systems understand AHE mechanisms induced by