New trends to grow the n-CdZn (S1-xSex)2/p-CuIn(S1-xSex)2 heterojunction thin films for solar cell applications
作者： S. Chavhan , R. Sharma
DOI: 10.1016/J.SOLMAT.2005.07.010
关键词:
摘要: Abstract The n-CdZn(S 1− x Se ) and p-CuIn(S 2 thin films have been grown by the solution growth technique (SGT) on glass substrates. Also heterojunction (p–n) based n-CdZn (S p-CuIn fabricated same technique. film has used as a window material which reduced lattice mismatch problem at junction with CuIn an absorber layer for stable solar cell preparation. Elemental analysis of was confirmed energy-dispersive X-ray (EDAX). structural optical properties were changed respect to composition ‘ ’ values. best results these parameters obtained = 0.5 composition. uniform morphology each well continuous smooth thickness deposition onto substrates SEM study. band gaps determined from transmittance spectra in range 350–1000 nm. These values are 1.22 2.39 eV CuIn(S CdZn(S films, respectively. J – V characteristic measured /p-CuIn(S under light illumination. device oc =474.4 mV, sc =13.21 mA/cm , FF=47.8% η =3.5% illumination 85 mW/cm active area 1 cm calculated fabrication. dark condition also studied ideality factor is equal 1.9 films.
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