Effect of copper content on optostructural, morphological and photoelectrochemical properties of MoBi 2−x Cu x Se 4 thin films
作者： Suvarta D. Kharade , Nita B. Pawar , Sawanta S. Mali , Chang K. Hong , Pramod S. Patil
DOI: 10.1007/S10853-013-7550-Z
关键词: Orthorhombic crystal system 、 Copper 、 Transmission electron microscopy 、 Scanning electron microscope 、 Thin film 、 Analytical chemistry 、 Materials science 、 Direct and indirect band gaps 、 Crystal structure 、 Electrical resistivity and conductivity
摘要: … [30] reported deposition of p-type copper bismuth selenide (CuBiSe 2 ) semiconductor thin films by electrodeposition method. The band gap of the CuBiSe 2 thin films was 1.50 eV …
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