作者: JG Garza , S Shaji , AC Rodriguez , TK Das Roy , B Krishnan
DOI: 10.1016/J.APSUSC.2011.07.115
关键词: Photovoltaic effect 、 Thin film 、 Selenide 、 Scanning electron microscope 、 Materials science 、 Band gap 、 Analytical chemistry 、 Photocurrent 、 Chemical bath deposition 、 Annealing (metallurgy)
摘要: Abstract Silver antimony selenide (AgSbSe2) thin films were prepared by heating sequentially deposited multilayers of sulphide (Sb2S3), silver (Ag2Se), selenium (Se) and (Ag). Sb2S3 film was from a chemical bath containing SbCl3 Na2S2O3, Ag2Se solution AgNO3 Na2SeSO3 Se an acidified Na2SeSO3, at room temperature on glass substrates. Ag thermal evaporation. The annealing 350 °C in vacuum (10−3 Torr) for 1 h. X-ray diffraction analysis showed that the formed polycrystalline AgSbSe2 or AgSb(S,Se)2 depending content precursor films. Morphology elemental these done using scanning electron microscopy energy dispersive spectroscopy. Optical band gap evaluated UV–visible absorption spectra Electrical characterizations Hall effect photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe2/Al formed, which CdS deposition. J–V characteristics this structure Voc = 435 mV Jsc = 0.08 mA/cm2 under illumination tungsten halogen lamp. Preparation as absorber material non-toxic selenization process is achieved.