Full band modeling of the excess current in a delta-doped silicon tunnel diode
作者： Cristian Rivas , Roger Lake , William R. Frensley , Gerhard Klimeck , Phillip E. Thompson
DOI: 10.1063/1.1606114
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摘要: The current of a molecular beam epitaxially grown Sb and B delta-doped Si tunnel diode is simulated in all regions tunneling: peak, valley, post-valley turn-on. All three the I–V are qualitatively captured by calculations. inclusion model bandtail states gives rise to excess turn on current. This dominated direct coherent tunneling component from gap state state. crossover between phonon-assisted occurs immediately after valley minimum. calculated voltages quantitatively match experimental measurements. magnitude approximately factor 5.4 too small. Sources error analyzed. calculations use second neighbor sp3s* planar orbital basis within nonequilibrium Green function formalism.
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