Polarization-charge tunnel junctions for ultraviolet light-emitters without p-type contact
DOI: 10.1063/1.3280866
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摘要: Polarization-charge tunnel junctions for ultraviolet light-emitters (λ<360 nm) are modeled using the k⋅p multiband quantum transmitting boundary method. It is shown that polarization-charge can carry sufficient current to be viable emitters. Sources of inefficiency in existing emitters discussed, including poor hole-injection efficiency and optical absorption p-type GaN contact layers. demonstrated deliver improvements both areas, by eliminating need contacts, enabling use a p-side-down structure, which have favorable characteristics carrier transport compared conventional p-side-up structures.
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V Bougrov, ME Levinshtein, Sergey L Rumyantsev, A Zubrilov, MS Shur, Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe John Wiley. ,(2001)
Nitride semiconductor devices : principles and simulation Wiley-VCH Verlag GmbH & Co. KGaA. ,(2007) , 10.1002/9783527610723
Igor Vurgaftman, Jerry R. Meyer, Electron Bandstructure Parameters Nitride Semiconductor Devices: Principles and Simulation. pp. 13- 48 ,(2007) , 10.1002/9783527610723.CH2
M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, M. Krames, Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction Applied Physics Letters. ,vol. 79, pp. 3720- 3722 ,(2001) , 10.1063/1.1415405
KB Nam, ML Nakarmi, J Li, JY Lin, HX Jiang, None, Mg acceptor level in AlN probed by deep ultraviolet photoluminescence Applied Physics Letters. ,vol. 83, pp. 878- 880 ,(2003) , 10.1063/1.1594833
Cristian Rivas, Roger Lake, William R. Frensley, Gerhard Klimeck, Phillip E. Thompson, Karl D. Hobart, Sean L. Rommel, Paul R. Berger, Full band modeling of the excess current in a delta-doped silicon tunnel diode Journal of Applied Physics. ,vol. 94, pp. 5005- 5013 ,(2003) , 10.1063/1.1606114
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, An aluminium nitride light-emitting diode with a wavelength of 210 nanometres Nature. ,vol. 441, pp. 325- 328 ,(2006) , 10.1038/NATURE04760
Martin F. Schubert, Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges Physical Review B. ,vol. 81, pp. 035303- ,(2010) , 10.1103/PHYSREVB.81.035303
Seong-Ran Jeon, Young-Ho Song, Ho-Jin Jang, Gye Mo Yang, Soon Won Hwang, Sung Jin Son, Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions Applied Physics Letters. ,vol. 78, pp. 3265- 3267 ,(2001) , 10.1063/1.1374483
Martin F. Schubert, Qi Dai, Jiuru Xu, Jong Kyu Kim, E. Fred Schubert, Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes Applied Physics Letters. ,vol. 95, pp. 191105- ,(2009) , 10.1063/1.3258488