摘要: Researchers in Japan have used electron-beam excitation an AlGaN/AlGaN quantum-well structure to demonstrate the emission of ultraviolet light at record-breaking efficiency, giving hope for realization high-power efficient semiconductor sources deep-ultraviolet light.
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KB Nam, ML Nakarmi, J Li, JY Lin, HX Jiang, None, Mg acceptor level in AlN probed by deep ultraviolet photoluminescence Applied Physics Letters. ,vol. 83, pp. 878- 880 ,(2003) , 10.1063/1.1594833
Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh, Takashi Mukai, Hole Compensation Mechanism of P-Type GaN Films Japanese Journal of Applied Physics. ,vol. 31, pp. 1258- 1266 ,(1992) , 10.1143/JJAP.31.1258
Takao Oto, Ryan G. Banal, Ken Kataoka, Mitsuru Funato, Yoichi Kawakami, 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam Nature Photonics. ,vol. 4, pp. 767- 770 ,(2010) , 10.1038/NPHOTON.2010.220
Martin F. Schubert, Polarization-charge tunnel junctions for ultraviolet light-emitters without p-type contact Applied Physics Letters. ,vol. 96, pp. 031102- ,(2010) , 10.1063/1.3280866
Asif Khan, Krishnan Balakrishnan, Tom Katona, Ultraviolet light-emitting diodes based on group three nitrides Nature Photonics. ,vol. 2, pp. 77- 84 ,(2008) , 10.1038/NPHOTON.2007.293
I. D. Goepfert, E. F. Schubert, A. Osinsky, P. E. Norris, N. N. Faleev, Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices Journal of Applied Physics. ,vol. 88, pp. 2030- 2038 ,(2000) , 10.1063/1.1305842