Low Resistivity GaN-Based Polarization-Induced Tunnel Junctions
作者： Miao-Chan Tsai , Benjamin Leung , Ta-Cheng Hsu , Yen-Kuang Kuo
关键词: Light-emitting diode 、 Optoelectronics 、 Wide-bandgap semiconductor 、 Diode 、 Electrical resistivity and conductivity 、 Nitride 、 Quantum tunnelling 、 Materials science 、 Indium gallium nitride 、 Tunnel junction
摘要: The use of polarization charges in nitride based tunnel junctions enables a wide range design approaches to increase the tunneling current magnitudes usable high efficiency GaN-based devices, including enhanced multijunction solar cells, optoelectronic and electronic devices. Here, an integrated computational model is used explore dopant concentration profile implement hybrid both AlGaN InGaN layers systematically optimize configuration structure. proposed junction structure, with indium composition doping density compatible for insertion into typical Ga-polar multiple-quantum well light-emitting diode allows under reverse bias condition, achieving resistivity 7.8 × 10-3 Ω·cm2.
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