P2.5.3 SiC-FET Sensors for Methanol Leakage Detection

作者: Z. Darmastuti , M. Andersson , P-O. Käll , L. Ojamäe , A. Lloyd Spetz

DOI: 10.5162/IMCS2012/P2.5.3

关键词:

摘要: Pt and Ir SiC based Field Effect Transistor sensors were tested to detect low concentration of methanol (<200 ppm) for both process control leak detection applications. gave good very fast response at 200°C, while larger but much slower response. The presence oxygen improved the sensor which was favorable application. influence hydrogen propene also studied. Beside experimental work, mechanism different sensing behavior studied by quantum chemical calculations.

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