A Si/CdTe Compton Camera for gamma-ray lens experiment
作者： Tadayuki Takahashi
DOI: 10.1007/S10686-006-9059-9
关键词:
摘要: Cadmium telluride (CdTe) and cadmium zinc (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray γ-ray detection. However, a considerable amount of charge loss in these detectors results reduced energy resolution. We achieved significant improvement the spectral properties by forming Schottky junction on Te side CdTe wafer. With further reduction leakage current an adoption guard ring structure, we demonstrated pixel detector with high resolution full collection capabilty. The has size few mm thickness 0.5 – 1 mm. apply this to new silicon Compton Camera which features angular also describe concept stack consists many thin layers provides sufficient efficiency X-rays gamma-rays up several hundred keV maintaining good A narrow-FOV telescope can be realized installing Si/CdTe inside deep well active shield. This configuration is very suitable focal plane future focusing gamma-ray missions.
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