Recent results from a Si/CdTe semiconductor Compton telescope
作者： Takaaki Tanaka , Shin Watanabe , Shin’ichiro Takeda , Kousuke Oonuki , Takefumi Mitani
DOI: 10.1016/J.NIMA.2006.06.014
关键词:
摘要: We are developing a Compton telescope based on high resolution Si and CdTe detectors for astrophysical observations in sub-MeV/MeV gamma-ray region. Recently, we constructed prototype which consists of six layers double-sided strip pixel to demonstrate the basic performance this new technology. By irradiating detector with gamma-rays from radio isotope sources, have succeeded reconstruction images spectra. The obtained angular is 3.9{sup o} (FWHM) at 511 keV, energy 14 keV same energy. In addition conventional reconstruction, i.e., drawing cones sky, also demonstrated full by tracking recoil electrons using signals detected successive layers. {sup 137}Cs source, successfully an image spectrum 662 line emission method. As next step, development larger size 4 cm x underway improve effective area telescope. low-noise analog ASIC handle increasing number channels. Initial results these two technologies presented paper as well.
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