Simple processed semi-transparent Schottky diode based on PMMA-MWCNTs nanocomposite for new generation of optoelectronics
作者： Ahmed M. Nawar , Ahmed M. El-Mahalawy
DOI: 10.1016/J.SYNTHMET.2019.116102
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摘要: Abstract Herein, a semi-transparent Schottky diode based on poly (methyl methacrylate), PMMA, doped multiwall carbon nanotubes, MWCNTs/FTO is fabricated by convective self-assembly method. The analyzed spectrophotometric optical transmittance profile of FTO/PMMA-MWCNTs/carbon device showed its maximum transparency 62% at wavelength ˜ 472 nm. values direct as well indirect energy gap are calculated using absorption spectrum fitting (ASF) method and found to be in semiconducting range with 3.21, 2.78 eV, respectively. estimated microelectronic parameters has an ideality factor equal one (n = 1) barrier height alters between 0.63 0.75 eV. highest power conversion efficiency (PCE) that achieved the present architecture about 5.64% 12 mW/cm2. shows photovoltaic characteristics semitransparency properties visible region.
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