Formation mechanism of graphene buffer layer on SiC(0 0 0 1)

摘要: Abstract The initial stage of the growth graphene on SiC with underlying mechanism carbon layer early formation single crystal silicon carbide surface was studied using sublimation technique. obtained buffer is organized in a form regions 10% sp 3 defects separated 10–15 A. Raman spectroscopy used to assess degree layer’s disorder. intensity I ( D ) and G B peaks found be proportional number defects. Although not fully saturated atoms, it remains impenetrable. However, from steps side walls which are covered by possible. It observed that vicinity macro-step edges more effective, leads production additional free C filling structure, subsequently decreasing hybridization, about 1–2%. This healing process also continues during reflected decrease line finally well-organized layer.