Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation
作者： S.P Jamison , B Ersfeld , D.A Jaroszynski
DOI: 10.1016/J.CAP.2003.11.013
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摘要: Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation biased GaAs are presented. This is inconsistent with long standing and widely accepted surface-layer current-surge description emission process. A model based on propagating carrier fronts during spectral-hole-burning proposed to explain these observations. introduces new roles for semiconductor optical transport properties determining efficiency generation
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