Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors
作者： M. Funato , T. Kotani , T. Kondou , Y. Kawakami , Y. Narukawa
DOI: 10.1063/1.2217259
关键词:
摘要: A color synthesis based on InGaN∕GaN quantum wells (QWs) grown GaN microfacets formed by regrowth SiO2 mask stripes is demonstrated. The microfacet structure composed of (0001), {112¯2}, and {112¯0} planes, the InGaN well thickness composition are spatially inhomogeneous due to diffusion adatoms among facets. These properties allow QWs, which, for example, emit yellow from (0001) facet blue {112¯2} facet, be fabricated, which luminescence appears white additive mixing. Using a pattern that consists regions with without stripes, emissions QWs planar synthesized produce desired apparent output colors.
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