600-nm-Range GaInP/AlInP Strained Quantum Well Lasers Grown by Gas Source Molecular Beam Epitaxy
作者： Ichirou Nomura , Katsumi Kishino , Akihiko Kikuchi , Yawara Kaneko
DOI: 10.1143/JJAP.33.804
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摘要: GaInP strained single quantum well (SSQW) lasers in the 630–710 nm range grown by gas source molecular beam epitaxy (GSMBE) using a novel shutter control method were systematically investigated. A good controllability strain amount as in-plane compositional homogeneity over 4-cm-long distance of laser wafers confirmed. For +1.1% compressive SSQW (708 wavelength), very low threshold current density (J th) 175 A/cm2 was obtained. These facts suggest that is effective for fabricating lasers. Furthermore, post-annealing effect on lasing characteristics The increased p carrier Be-doped AlInP layers obtained with remarkable reduction J th value 633 tensile from 850 to 555 A/cm2.
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