Selective metal electrodeposition through doping modulation of semiconductor surfaces

摘要: We demonstrate selective electrodeposition of magnetic layers on doped semiconductors resulting in a self-aligned pattern which replicates the doping semiconductor surface. A Schottky barrier forms at interface between substrate and electrolyte, upon application cathodic potential is biased forward (reverse) direction for n- or p-type semiconductors, respectively. Electron transfer from an n-type thus possible, while breakdown would be necessary deposition substrate. The process will spatially lateral modulation doping. As example we Co GaAs.