作者: Gerhard Fasol , Katharina Runge
DOI: 10.1063/1.118858
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摘要: A selective electrodeposition method for the fabrication of extremely thin and long metallic magnetic wires is introduced. Growth done on cleaved edge a semiconductor multilayer structure incorporating 4-nm-wide modulation doped quantum well. This conducting well connected to negative current contact during electrodeposition. Since requires neutralization positive metal ions from solution, deposition takes place selectively onto well, leading wires, which should be useful investigation limits storage.