Growth of In-doped CdTe from Te excess solution and its characteristics as a γ-ray detector

摘要: Abstract CdTe single crystals were grown from a Te excess solution and In was added as donor dopant in order to compensate the native defects such cadmium vacancy V Cd introduced through growth process. The as-grown doped showed n-type electrical conductivity which varied 10 -4 -8 (ohm cm) -1 seemed have many complex trapping centers (V 2- .2In + ), consisting of singly ionized donors on site (In ) negatively charged vacancies ). Surface barrier type γ-ray detectors having size about 1×3×3 mm 3 fabricated they good response for 59.5 keV γ-rays 241 Am with resolution expressed FWHM (full width at half maximum) 7.0 keV. characteristics nuclear compared that undoped by present authors using travelling solvent method (TSM).