Effects of Cd‐vapor and Te‐vapor heat treatments on the luminescence of solution‐grown CdTe:In

摘要: We have employed cathodoluminescence at 80–300 K in the first comprehensive study of effects Cd‐vapor or Te‐vapor heat treatments on luminescence solution‐grown CdTe:In. The broad 1.4‐eV band present as‐grown material is weakened by Te firing and typically enhanced Cd firing. These results do not support earlier connections between this VCd‐InCd complexes predicted defect chemistry calculations to be dominant Alternatives straightforward interpretation are discussed for both experiments modeling. injection‐level dependence, frequency response, temperature dependence described. This arises from localized transitions within compact our material, but different species competing transition mechanisms involved heat‐treated material. edge emission, fired peaks near 1.57 eV 80 thus close band‐gap energy CdTe. However, frequency‐response data reveal anomalous energy‐storage processes which can slow edge‐emission kinetics microsecond regime following Another surprising result strong coupling emission a sharp extrinsic 1.54 prominent Te‐fired