Injection‐level dependence, frequency response, and thermal quenching of the 1.39‐eV luminescence in Sn‐doped LPE GaAs

摘要: We have investigated the injection‐level dependence, frequency response, and thermal‐quenching characteristics of extrinsic 1.39‐eV bands in Sn‐doped LPE GaAs. In lightly doped material, both peak energy band shape are insensitive to injection level. Frequency‐response measurements show that dynamic response is slow, with characteristic times μsec. Thermal‐quenching data a relatively large activation which rules out participation normal shallow levels luminescence. heavily very similar material. However, material shows an anomalous dependence lower than Our indicate donor‐acceptor pair transitions not involved luminescence; rather, luminescence results either from intracenter compact complexes or partially forbidden between conduction deep acceptor level associated complex.