A study of the mobility of the implanted atoms in thin films of HCP metals

摘要: Hydrogen, deuterium and helium were implanted wilh energies from 0 125 to 3 keV at 5 K into thin film specimens of rhenium on a sapphire substrate. The annealing the implantation-induced resistivity was measured during isochronal heating specimen up 400 FC. Substantial after low-energy hydrogen implantation occurs only 300 K., but mobility subsequent trapping lower temperatures cannot be excluded, Helium in becomes mobile around 300 K. not below. almost 100% recovery 300 K may due losses surfaces or other sinks. Annealing following 3keV same temperature range as electron irradiation, can therefore ascribed displacement defects.