Implantation and defect production by low energy light ions in thin films of gold and tungsten
作者： P. Jung , A. S. Soltan†
DOI: 10.1080/10420159108220758
关键词: Atom 、 Irradiation 、 Electrical resistivity and conductivity 、 Analytical chemistry 、 Electron beam processing 、 Thin film 、 Field ion microscope 、 Ion 、 Chemistry 、 Tungsten 、 Atomic physics
摘要: Abstract A novel method to determine the widths of distributions implanted atoms and atomic defects from resistivity measurements is described for implantation H, D, He in thin films Au W at 5 K energies 0·25 3 keV. The obtained are agreement with experimental data field ion microscopy but deviate results Monte Carlo simulations (“TRIM”-code). Furthermore contribution per atom derived, giving ρH. D = 1.7 ± 0.5 ρHe 3.3 0.8 μΩ/u.c. gold ρH.D 1.6 0.2 7.6 0.6 μωm/u.c. tungsten. number produced determined damage rate measurements. Calculations shows that threhold energy displacement function under low light irradiation agree reasonably respective values derived electron irradiation.
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