Range profiles of low-energy (100 to 1500 eV) implanted 3He and 4He atoms in tungsten I. Experimental results
作者： Jun Amano , Alfred Wagner , David N. Seidman
DOI: 10.1080/01418618108244501
关键词: Materials science 、 Irradiation 、 Helium atom 、 Low energy 、 Atomic physics 、 Range (particle radiation) 、 Tungsten 、 Microscope 、 Analytical chemistry
摘要: Abstract The range profiles of low-energy (100 to 1500 eV) 3He and 4He atoms implanted in situ, parallel the [110] direction (±5°) tungsten, at 60 K have been measured employing an atom-probe field-ion microscope. absolute depth each deposited helium atom, from irradiated surface, was directly within one (110) interplanar spacing (27middot;24 A). At both were found, other research, be immobile; thus, determined complete absence any diffusional effects. mean (α) increases monotonically, although non-linearly, as implantation energy increased 100 eV; value x varies 33 158 A 19 195 for profiles, respectively. straggling (Δx) also Δx 23 97 an...
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