A study of the composition of the {111} planes of GaP on an atomic scale
作者： Masahiko Yamamoto , David N. Seidman , Shogo Nakamura
DOI: 10.1016/0039-6028(82)90206-0
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摘要: Abstract Atom-probe field-ion microscope (FIM) analyses were performed on specimens of the compound semiconductor GaP. A set experimental conditions was found which allows study GaP employing straight time-of-flight atom probe. The purposes investigation to show step-like field-evaporation behavior — corresponding each atomic layer {111} planes and determine composition plane atoms. This type information is based periodicity crystal (zinc blende structure) potential value for a wide range physical problems involving semiconductors. Our studies showed that can indeed be determined. overall stoichiometry related background gas hydrogen number ions field evaporated per pulse. observations are explained in terms possible fieldevaporation mechanisms main FIM hydrogen.
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