Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells

摘要: Light emitting diodes (LEDs) based on In(x)Gal(1-x)N (x = 0.15-0.2)/GaN multiple-quantum wells ( MQWs) have been grown sapphire substrates. Their wavelength emission can be tuned from blue to orange by increasing the QW thickness. This opens way for monolithic white LEDs combining several QWs of various thicknesses, i.e., "colors", inside GaN p-n junction. is demonstrated realization (blue + yellow) dual color LEDs. The coordinates in CIE 1931 chromaticity diagram EL spectrum are 0.29, y 0.31) and correspond a temperature 8000 K. expected performances compared hybrid technologies such as pumping yellow phosphors.