Anwendungsmöglichkeiten der Analyse der diffusen Streuung von Röntgenstrahlen zur Untersuchung von einkristallinen Halbleiter-Mischkristallen
作者： V. T. Bublik
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摘要: Um die Wechselwirkungsparameter der Atome in festen Phase von Halbleiter-Mischphasen Systeme GeSi, GaAsGaP und GaAsAlAs zu bestimmen, wurde diffuse Streuung Rontgenstrahlen an Einkristallen mit Hilfe Theorie KRIVOGLAZ analysiert. Die Ergebnisse gestatten es, Zustandsdiagramme betrachteten berechnen. In order to determine the interaction parameters of atoms semiconducting solid solutions systems scattering X-rays by single crystals was analyzed on base theory KRIVOGLAZ. The results enable one calculate phase diagrams system taken into consideration.
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