Small grain size, conformal aluminum interconnects and method for their formation
作者： Gurtej Singh Sandhu , Wing-Cheong Gilbert Lai
DOI:
关键词:
摘要: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, second TiN the TiN. The amorphous. polycrystalline, having mixed grain orientation. Finally, aluminum film nitride. Optionally, silicide structure prior to step forming Interconnects according invention have polycrystalline films with sizes approximately less than 0.25 microns.
google.nl 参考文章(38)
Tyler A. Lowrey, Trung T. Doan, Aluminum alloy containing copper, silicon and titanium for VLSI devices ,(1989)
Fu-Tai Liou, Fusen E. Chen, Method of producing an aluminum stacked contact/via for multilayer ,(1993)
Robert W. Fiordalice, Hisao Kawasaki, Johnson O. Olowolafe, Method for forming a conductive interconnect in an integrated circuit ,(1994)
Stephen Mark Fine, David Arthur Bohling, Process for chemical vapor codeposition of copper and aluminum alloys ,(1995)
Motohiro Kyowa Hakko Kogyo co. Ltd. Ohta, Yasushi Kyowa Hakko Kogyo co. Ltd. Watanabe, Kiyoshi Kyowa Hakko Kogyo Co. Ltd. Morimoto, Bubbling tablet, bubbling bath additive tablet, bubbling washing detergent tablet, bubbling tablet for oral administration, and processes for producing these ,(2001)
Trung T. Doan, Mark E. Tuttle, Method to form a low resistant bond pad interconnect ,(1993)
Roderick C. Mosely, Timothy M. McEntee, Lawrence T. Lamont, Deposition and planarizing methods and apparatus ,(1986)
Jun Hayashi, Michiko Yamanaka, Semiconductor device and fabrication process therefor ,(1994)