Ferroelectric space charge capacitor analog memory

摘要: A ferroelectric space charge capacitor analog memory device includes a pair of spaced first and second electrodes; dielectric disposed between the signal source for applying to write equal or greater than coercive voltage into predetermined polarization state in range from zero maximum coerced establish, proximate interface each electrode, region having opposite that applied with neutral regions, relative sizes regions defining capacitance dielectric, an internal field represented by regions; bias less at rate slower formation define level representative state; introducing read faster which together is voltage; current detector responsive introduction determining state.