Nondestructive readout-type ferroelectric memory device having twisted hysteresis

作者: Masayoshi Omura

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摘要: A first ferroelectric capacitor has a member having film thickness and an area, electrodes formed on both major surfaces of the member, respectively. Thus, polarization. second The capacitors are connected parallel to each other, thereby forming memory device. Since device uses synthesized hysteresis characteristics two different coercive field values, it can use multi-value data, perform nondestructive readout data stored in capacitors.

参考文章(3)
Mitsuo Harata, Motomasa Imai, Koji Yamakawa, Hiroshi Toyoda, Kazuhide Abe, Koji Sakui, Ferroelectric capacitor and a semiconductor device having the same ,(1990)