Ferroelectric ram arrangement
作者： Frank Hintermaier , Walter Hartner , Günther Schindler
DOI:
关键词: Optoelectronics 、 Ferroelectricity 、 Voltage 、 Ferroelectric capacitor 、 Transistor 、 Electrical engineering 、 Capacitor 、 Engineering 、 Ferroelectric RAM
摘要: The invention relates to a ferroelectric RAM arrangement, comprising number of storage cells, each which has selection transistor (2, 3) and capacitor device with dielectric. Said consists at least two capacitors (C1, C2) whose coercive voltages (VC1, VC2) are different from other.
lens.org 参考文章(5)
Akira Kamisawa, Ferroelectric memory with multiple-value storage states ,(1992)
Kazuhiro Hoshiba, Capacitor in a semiconductor integrated circuit and non-volatile memory using same ,(1992)
Masayoshi Omura, Nondestructive readout-type ferroelectric memory device having twisted hysteresis ,(1994)
Yamashita Atsushi, Ferroelectric memory cell and reading/writing method thereof ,(1997)
Mitsuo Harata, Motomasa Imai, Koji Yamakawa, Hiroshi Toyoda, Kazuhide Abe, Koji Sakui, Ferroelectric capacitor and a semiconductor device having the same ,(1990)