Ferroelectric memory cell and reading/writing method thereof

摘要: A ferroelectric memory cell is provided, which enables to store a plurality of data values therein, and writing reading methods thereof. The includes first n-th capacitors connected in parallel where n an integer greater than unity. have different reverse voltages from each other, the defined as applied voltage at direction polarization reversed. Each stores two-valued information. information therefore, can 2n therein. integration scale be enhanced.