The Mn3+/2+ acceptor level in group III nitrides
作者： T. Graf , M. Gjukic , M. S. Brandt , M. Stutzmann , O. Ambacher
DOI: 10.1063/1.1530374
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摘要: Molecular-beam-epitaxy grown GaN:Mn and AlN:Mn layers with Mn concentrations around 1020 cm−3 were investigated by optical absorption photoconductivity measurements. From electron spin resonance is known to be mostly present in the neutral acceptor state GaN without codoping. This leads a reassignment of features charge transfer from Mn3+ oxidation state, either direct photoionization at 1.8 eV or through photothermal ionization process via an excited 1.42 above ground spin-allowed Mn3+ 5E→5T internal absorption. The position Mn3+/2+ level valence-band edge makes realization carrier-mediated ferromagnetism rather unlikely GaN:Mn.
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