Electronic structure of the neutral manganese acceptor in gallium arsenide

作者: J. Schneider , U. Kaufmann , W. Wilkening , M. Baeumler , F. Köhl

DOI: 10.1103/PHYSREVLETT.59.240

关键词: Electron paramagnetic resonanceAcceptorCrystallographyExchange interactionManganeseNuclear magnetic resonanceElectronic structureInorganic compoundGallium arsenideGround statePhysics

摘要: A new maganese-related isotropic electron-spin-resonance signal at g=2.77 has been observed in GaAs. It is shown to arise from the neutral Mn acceptor, ${\mathrm{Mn}}^{0}$. The analysis gives an answer longstanding question of whether structure ${\mathrm{Mn}}^{0}$ correponds 3${\mathrm{d}}^{4}$ or 3${\mathrm{d}}^{5}$+hole. data clearly favor latter case, thus revealing that exception within 3d acceptor family

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