Al-Si-N thin films deposited by laser ablation: Effect of plasma parameters on mechanical and optical properties
作者： L.P. Rivera , Enrique Camps , Stephen Muhl , Rafael Basurto , A. Zeinert
DOI: 10.1016/J.MATERRESBULL.2017.10.044
关键词:
摘要: Abstract Al-Si-N thin films were deposited using simultaneous laser ablation of silicon and aluminum targets in a nitrogen atmosphere at substrate temperature 200 °C. The content the was studied as function plasma parameters (mean ion kinetic energy density), produced by target. measured means planar Langmuir probe optical emission spectroscopy. chemical composition determined X-ray photoelectron results showed dependence between density. Optical spectroscopy measurements that variations working pressure changes intensity excited species (N 2 + , Si 2+ Al 0 ), incorporation these elements into films. For 0.6 Pa, hardness gave maximum 30 ± 1.5 GPa for 4 at.%. constants (refractive index extinction coefficient) direct band gap evaluated
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