Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions
作者： D Cooper , A C Twitchett , I Farrer , D A Ritchie , R E Dunin-Borkowski
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摘要: Si and GaAs p-n junctions have been characterised in the transmission electron microscope using off-axis holography. Focused ion beam milling was used to prepare parallel-sided membranes with thicknesses of 200–500 nm. Off-axis holograms were acquired at 200kV order assess effect specimen preparation on electrostatic potentials measured across junctions.
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