Simulation in elemental mapping using aberration-corrected electron microscopy.
作者： L.J. Allen
DOI: 10.1016/J.ULTRAMIC.2017.03.001
关键词:
摘要: Elemental mapping at the atomic scale in aberration-corrected electron microscopes is becoming increasingly widely used. In this paper we describe essential role of simulation understanding underlying physics and thus correctly interpreting these maps, both qualitatively quantitatively.
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