Ferroelectricity and Rashba effect in GeTe

摘要: GeTe has been proposed as the father compound of a new class functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric semiconductors. In nice agreement with first principle calculations, we show by angular resolved photoemission and piezo-force microscopy that displays surface bands arising from intrinsic inversion symmetry breaking provided remanent polarization. This work points possibility control spin chirality in acting on its