Conductivity and field effect transistor of La2@C80 metallofullerene.
作者： Shin-ichiro Kobayashi , Satoshi Mori , Satoru Iida , Hiroaki Ando , Taishi Takenobu
DOI: 10.1021/JA034944A
关键词:
摘要: We first demonstrate a field-effect-transistor operation of dimetallofullerene La2@C80 with the icosahedral cage symmetry. The thin-film device showed an n-type behavior mobility 1.1 x 10-4 cm2/V s at room temperature under high vacuum. Taking nature LUMO into account, indicates occurrence carrier conduction through encapsulated La ions. low mobility, suggesting intermolecular hopping mechanism, is ascribed to intrinsic and extrinsic reasons, which are discussed in text.
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