OPTICAL PROPERTIES AND ELECTRONIC STRUCTURE OF ORGANIC-INORGANIC NANO-INTERFACE
作者： A. Fujiwara , A. Konishi , E. Shikoh
DOI: 10.1007/978-1-4020-9146-9_1
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摘要: Interfaces between C60 and electrode materials (gold (Au) or indium tin oxide (In2O3 + SnO2 10 wt%, ITO)) have been investigated by means of optical absorption. For the bi-layer Au, a clear shift in onset absorption at long wave length (λ) region originated from Au was observed. This can be attributed to red plasma frequency decrease electron density Au. On other hand, for ITO, enhancement observed λ> 300 nm. The origin is suggested low energy charge transfer ITO C60, which consistent with Schottky barrier height interface. Our results suggest that electronic structures around interface an organic semiconductor inorganic metal are modified material.
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Ying Wang, J. M. Holden, A. M. Rao, Wen-Tse Lee, X. X. Bi, S. L. Ren, G. W. Lehman, G. T. Hager, P. C. Eklund, Interband dielectric function of C60 and M6C60 (M=K,Rb,Cs). Physical Review B. ,vol. 45, pp. 14396- 14399 ,(1992) , 10.1103/PHYSREVB.45.14396
R. C. Haddon, C70 THIN FILM TRANSISTORS Journal of the American Chemical Society. ,vol. 118, pp. 3041- 3042 ,(1996) , 10.1021/JA953881W
Kana Shibata, Yoshihiro Kubozono, Takayoshi Kanbara, Tomoko Hosokawa, Akihiko Fujiwara, Yasuhiro Ito, Hisanori Shinohara, Fabrication and characteristics of C84 fullerene field-effect transistors Applied Physics Letters. ,vol. 84, pp. 2572- 2574 ,(2004) , 10.1063/1.1695193
Ryo Nouchi, Ikuo Kanno, Charge transfer and formation of conducting C60 monolayers at C60/noble-metal interfaces Journal of Applied Physics. ,vol. 97, pp. 103716- ,(2005) , 10.1063/1.1897840
J. Paloheimo, H. Isotalo, J. Kastner, H. Kuzmany, Conduction mechanisms in undoped thin films of C60 and C60/70 Synthetic Metals. ,vol. 56, pp. 3185- 3190 ,(1993) , 10.1016/0379-6779(93)90100-B
Takao Nishikawa, Shin-Ichiro Kobayashi, Tomoyuki Nakanowatari, Tadaoki Mitani, Tatsuya Shimoda, Yoshihiro Kubozono, Gakushi Yamamoto, Hisao Ishii, Michio Niwano, Yoshihiro Iwasa, Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification Journal of Applied Physics. ,vol. 97, pp. 104509- ,(2005) , 10.1063/1.1903109
Takayuki Nagano, Michiko Tsutsui, Ryo Nouchi, Naoko Kawasaki, Yohei Ohta, Yoshihiro Kubozono, Nobuya Takahashi, Akihiko Fujiwara, Output Properties of C60 Field-Effect Transistors with Au Electrodes Modified by 1-Alkanethiols Journal of Physical Chemistry C. ,vol. 111, pp. 7211- 7217 ,(2007) , 10.1021/JP0708751
Masayuki Chikamatsu, Shuichi Nagamatsu, Yuji Yoshida, Kazuhiro Saito, Kiyoshi Yase, Koichi Kikuchi, Solution-processed n-type organic thin-film transistors with high field-effect mobility Applied Physics Letters. ,vol. 87, pp. 203504- ,(2005) , 10.1063/1.2130712
Shin-ichiro Kobayashi, Satoshi Mori, Satoru Iida, Hiroaki Ando, Taishi Takenobu, Yasujiro Taguchi, Akihiko Fujiwara, Atsushi Taninaka, Hisanori Shinohara, Yoshihiro Iwasa, Conductivity and field effect transistor of La2@C80 metallofullerene. Journal of the American Chemical Society. ,vol. 125, pp. 8116- 8117 ,(2003) , 10.1021/JA034944A
S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogawa, Y. Iwasa, Control of carrier density by self-assembled monolayers in organic field-effect transistors Nature Materials. ,vol. 3, pp. 317- 322 ,(2004) , 10.1038/NMAT1105