Thin film deposition method
作者： Nicolas Nadaud , Binh Tran , Guillaume Bignon , Se-Jong Kim
DOI:
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摘要: The invention relates to a method for obtaining substrate coated on at least part of its surface, by one layer an oxide metal M having physical thickness less than or equal 30 nm, said not being included in stack layers comprising silver. Said comprises the following steps: intermediate material selected from M, nitride carbide sub-stoichiometric oxygen is deposited cathodic sputtering, above below based titanium oxide, nm; and surface oxidised means heat treatment, during which direct contact with oxidising atmosphere, especially air, temperature exceeding 150°C treatment.
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